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Hynix
Semiconductor, Inc. New Products
Hynix Submits
512Mb DDR2 SDRAM Samples to Intel For Evaluation
Intel
Developer Forum, San Jose, CA -September 16, 2003
– In preparation for IDF Fall 2003, Hynix Semiconductor,
Inc. (www.hynix.com) announced it has submitted 512Mb DDR2 SDRAM devices
to Intel Corporation for evaluation and its samples are successfully
booting with Intel's next generation dual processor server chipset code
named ‘Lindenhurst.’ The Hynix 512Mb DDR2 SDRAM is currently available
in sample quantities with mass production scheduled for early 2004.
“Hynix’s DDR2 technology is geared for Intel’s next generation server,
workstation, desktop, and mobile platforms starting in 2004,” said Pete
MacWilliams, Senior Fellow Intel Corporation. “DDR2 memory technology is
especially beneficial in rack mount server systems as it provides better
performance while reducing power consumption.”
The Hynix 512Mb DDR2 SDRAM devices will serve as the basis for its DDR2
DIMMs and will enable OEMs and system developers to deliver stable and
high-performance DDR2 platforms for server, workstation and personal
computing. The Hynix 512Mb DDR2 SDRAM evaluation for validation by Intel
follows its 512Mb DDR400 validation in June of 2003 and further
demonstrates the Hynix leadership position in the high-speed DDR memory
market.
According to Farhad Tabrizi, Vice President of Worldwide Marketing,
Hynix projects a surge in demand for DDR2 memory products throughout
2004 as the server and PC industry adopt various Intel chipsets
supporting DDR2 memory architecture.
The Hynix 512Mb DDR2 SDRAM devices are designed and manufactured on the
company’s advanced .11-micron Golden Chip process technology. The
devices being developed can operate at a data transfer rate of up to 667
(Mbps) per pin at 1.8 V and are offered in 128M x 4 bits, 64M x 8 bits,
and 32M x 16 bits configurations in a FBGA package and fully comply with
JEDEC DDR2 specifications and standards.
SEOUL, Korea--(BUSINESS WIRE)--July 29, 2003
Hynix Semiconductor Inc. (Hynix,www.hynix.com),
announced today it has developed a 500MHz 256Mbit DDR SDRAM and
will begin its full-scale volume production in August 2003.
The newly introduced DDR500, a high-performance PC main memory device,
runs at 500MHz and will be available in FBGA, TSOP or QFP package. The
DDR500 product line up is aimed towards the gaming market enthusiasts who
tend to require higher frequencies and system performance.
The main memory DDR500 follows the introduction a 500MHz graphic
memory last year and will be manufactured using the company's Prime Chip
0.13-micron process technology.
Currently, the main memory DRAM market is experiencing a rapid
transition in demand from DDR266 to DDR333/400. Hynix expects the DDR500
to demand a 10-20% premium relative to DDR400 due to limited supply.
Hynix aims to continue to maintain and expand its leadership position
in the high-performance PC, workstation and computer game consol markets,
requiring ultra high-speed memory products. Hynix is dedicated to
maintaining its competitive edge in the high-speed memory market through
continuous development of ultra high-speed devices.
SEOUL, Korea--(BUSINESS
WIRE)--May 29, 2003--Hynix Semiconductor Inc. today announced
it has launched volume production of its "Handy SDRAM," an
ultra-low power mobile SDRAM used in next generation mobile
telecommunication handsets, Personal Digital Assistants (PDAs), Digital
Still Cameras and various other consumer products.
Handy SDRAM, with an operating voltage of 1.8V
in a 54-Ball FBGA package will be manufactured using the company's
.13-micron process technology. "The Handy SDRAM addresses the
mobile market's need for large amounts of memory with an extended
battery life. We expect the low power DRAM market to exceed $1.5 billion
by 2006 and expect to penetrate and capture a significant portion of
this market through aggressive promotion of Handy SDRAM," said
Farhad Tabrizi, Vice President of Worldwide Marketing at Hynix.
Hynix has applied various leading-edge low-power
technologies such as Partial Array Self Refresh (PASR), Temperature
Compensated Self Refresh (TCSR), Deep Power Down (DPD), and Driver
Strength (DS) validated by JEDEC, the semiconductor engineering
standardization body, to maximize the efficiency of the product
performance. Furthermore, by applying its "Automatic TCSR"
technology geared to control self-refresh and speed within the DRAM
cell, Hynix can further reduce power consumption while increasing speed.
About Hynix Semiconductor Inc.
Hynix Semiconductor Inc. (HSI) of Ichon, Korea,
is an industry leader in the development, sales, marketing and
distribution of high-quality semiconductors, including DRAM, SRAM, Flash
memory and system IC devices. Hynix Semiconductor is the world's leading
DRAM supplier with thirteen semiconductor-manufacturing facilities
worldwide, and production capacity of over 300,000 wafer starts per
month. In addition, Hynix is expanding its system IC business unit with
leading technology and added deep sub-micron foundry services to
strategically broaden its overall semiconductor presence and achieve its
goal of leading the global semiconductor market. Hynix maintains
worldwide development, manufacturing, sales and marketing facilities.
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SEOUL, Korea, December 10, 2002 – Hynix
Semiconductor Inc. today announced it has developed a 500MHz-128Mb (4Mx32) DDR-I
SDRAM for supply to the graphic chipset manufacturing market.
This high speed DDR-I SDRAM product, an industry first, features 500MHz
frequency ( 1Gbps) speed, 32bit wide I/O and 144-ball FBGA package type. The new
product supports the high speed needs of desktop and work station graphics and
switch and router applications.
The new product has the highest speed in the DDR-I product line and is
compatible with the DDR-I board. Hynix forecasts the combination of speed,
compatibility, and an estimated cost advantage of 10% over DDR-II, will gain
quick acceptance for the new product from the graphics and network industries.
Farhad Tabrizi, Vice President of World-wide Marketing, stated "providing
the highest performance at the lowest possible price is the key for
differentiating the product by end application. DDR-I at 500 MHz does just
that."
Samples of the product, reaffirming the company’s position as a frequency
leader, have already been distributed to major graphic chipset manufacturers.
Hynix will introduce availability of a 500 MHz 4Mx32 DDR-II SDRAM in Q1 2003.Back
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